| * |
Power supply :Vdd: 2.3V ~ 2.7, Vddq: 2.3V ~ 2.7for DDR266/333. |
| * |
Vdd: 2.5V ~ 2.7V, Vddq: 2.5V ~ 2.7V for DDR400. |
| * |
Double-data-rate architecture; two data transfers per clock cycle. |
| * |
Bidirectional data strobe(DQS). |
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Differential clock inputs(CK and /CK). |
| * |
DLL aligns DQ and DQS transition with CK transition. |
| * |
Programmable Read latency 2, 2.5 (clock) for DDR266/333. |
| * |
Programmable Read latency 2.5,3 (clock) for DDR400. |
| * |
Programmable Burst length (2, 4, 8). |
| * |
Programmable Burst type (sequential & interleave). |
| * |
Edge aligned data output, center aligned data input. |
| * |
Auto & Self refresh, 7.8 us refresh interval(8K/64ms refresh). |
| * |
Serial presence detect with EEPROM. |
| * |
SSTL_2 Interface. |
