Notebook DDR-333
Feature
- Power supply :Vdd: 2.3V ~ 2.7, Vddq: 2.3V ~ 2.7for DDR266/333.
- Double-data-rate architecture; two data transfers per clock cycle.
- Bidirectional data strobe(DQS).
- Differential clock inputs(CK and /CK).
- DLL aligns DQ and DQS transition with CK transition.
- Programmable Read latency 2, 2.5 (clock) for DDR266/333.
- Programmable Burst length (2, 4, 8).
- Programmable Burst type (sequential & interleave).
- Edge aligned data output, center aligned data input.
- Auto & Self refresh, 7.8 us refresh interval(8K/64ms refresh).
- Serial presence detect with EEPROM.
- SSTL_2 Interface.
- 200 pin. socket type dual in line memory module.
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