Notebook DDR-266

Feature

• Power supply :Vdd: 2.3V ~ 2.7, Vddq: 2.3V ~ 2.7for DDR266/333.
• Double-data-rate architecture; two data transfers per clock cycle.
• Bidirectional data strobe(DQS).
• Differential clock inputs(CK and /CK).
• DLL aligns DQ and DQS transition with CK transition.
• Programmable Read latency 2, 2.5 (clock) for DDR266/333.
• Programmable Burst length (2, 4, 8).
• Programmable Burst type (sequential & interleave).
• Edge aligned data output, center aligned data input.
• Auto & Self refresh, 7.8 us refresh interval(8K/64ms refresh).
• Serial presence detect with EEPROM.
• SSTL_2 Interface.
• 200 pin. socket type dual in line memory module.