Notebook DDR2-800

Feature

  • JEDEC standard 1.8V± 0.1V Power Supply.
  • VDDQ = 1.8V± 0.1V
  • 400MHz fCK for 800Mb/sec/pin
  • 4 Banks/8 Banks
  • Posted /CAS
  • Programmable /CAS Latency: 5 or 6.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Read Latency(RL) -1.
  • Burst Length : 4 , 8(Interleave/nibble sequential).
  • Programmable Sequential / Interleave Burst Mode.
  • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature).
  • Off-Chip Driver(OCD) Impedance Adjustment.
  • On Die Termination with selectable values(50/75/150 ohms or disable).
  • PASR(Partial Array Self Refresh).
  • Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95°C.
    • * support High Temperature Self-Refresh rate enable feature.
  • All of Lead-free products are compliant for RoHS.

Density (Mbytes) Organization Speed
512 64M * 8 DDR2 800
1024 64M * 8 DDR2 800
1024 128M * 8 DDR2 800
2048 128M * 8 DDR2 800