>Product > Memory Module > Notebook DDR3 1333
Feature
 
* JEDEC standard 1.5V¡Ó0.1V Power Supply..
* VDDQ = 1.5V¡Ó0.1V
* 400MHz fCK for 800Mb/sec/pin
* 4 Banks/8 Banks
* Posted /CAS
* Programmable /CAS Latency: 5 or 6.
* Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
* Write Latency(WL) = Read Latency(RL) -1.
* Burst Length : 4 , 8(Interleave/nibble sequential).
* Programmable Sequential / Interleave Burst Mode.
* Bi-directional Differential Data-Strobe
(Single-ended data-strobe is an optional feature).
* Off-Chip Driver(OCD) Impedance Adjustment.
* On Die Termination with selectable values
(50/75/150 ohms or disable).
* PASR(Partial Array Self Refresh).
* Average Refresh Period 7.8us at lower than a TCASE 85¢XC,
3.9us at 85¢XC < TCASE < 95¢XC.
* Support High Temperature Self-Refresh rate enable feature.
* All of Lead-free products are compliant for RoHS.
 
Capacity:
 
Density (Mbytes) Organization Speed
1024 128M * 8 1066/1333
2048 128M * 8 1066/1333
2048 256M * 8 1066/1333
4096 256M * 8 1066/1333
 
 
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