>Product > Memory Module > Notebook DDR1 333
Feature
 
* Power supply :Vdd: 2.3V ~ 2.7, Vddq: 2.3V ~ 2.7for DDR266/333.
* Double-data-rate architecture; two data transfers per clock cycle.
* Bidirectional data strobe(DQS).
* Differential clock inputs(CK and /CK).
* DLL aligns DQ and DQS transition with CK transition.
* Programmable Read latency 2, 2.5 (clock) for DDR266/333.
* Programmable Burst length (2, 4, 8).
* Programmable Burst type (sequential & interleave).
* Edge aligned data output, center aligned data input.
* Auto & Self refresh, 7.8 us refresh interval(8K/64ms refresh).
* Serial presence detect with EEPROM.
* SSTL_2 Interface.
* 200 ping socket type dual in line memary module.
 
Capacity:
 
Density (Mbytes) Organization Speed
128 16M * 16 PC2100 / 2700
256 16M * 16 PC2100 / 2700
256 32M * 8 PC2100 / 2700
512 32M * 8 PC2100 / 2700
512 32M * 16 PC2100 / 2700
512 64M * 8 PC2100 / 2700
1024 64M * 8 PC2100 / 2700
 
 
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