>Product > Memory Module > Desktop DDR2 667
Feature
 
* JEDEC standard 1.8V¡Ó0.1V Power Supply..
* VDDQ = 1.8V¡Ó0.1V
* 333MHz fCKfor 667Mb/sec/pin
* 4 Banks/ 8 Banks
* Posted /CAS
* Programmable /CAS Latency: 4 or 5.
* Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
* Write Latency(WL) = Read Latency(RL) -1.
* Burst Length : 4 , 8(Interleave/nibble sequential).
* Programmable Sequential / Interleave Burst Mode.
* Bi-directional Differential Data-Strobe
(Single-ended data-strobe is an optional feature).
* Off-Chip Driver(OCD) Impedance Adjustment.
* On Die Termination with selectable values
(50/75/150 ohms or disable).
* PASR(Partial Array Self Refresh).
* Average Refresh Period 7.8us at lower than a TCASE 85¢XC,
3.9us at 85¢XC < TCASE < 95¢XC.
* Support High Temperature Self-Refresh rate enable feature.
* All of Lead-free products are compliant for RoHS.
 
Capacity:
 
Density (Mbytes) Organization Speed
512 64M * 8 DDR2 667
1024 64M * 8 DDR2 667
1024 128M * 8 DDR2 667
2048 128M * 8 DDR2 667
 
 
 
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